Single-Source Precursors for the Chemical Vapor Deposition of Iron Germanides

被引:0
|
作者
Buettner, Thomas [1 ]
Janka, Oliver [2 ]
Huch, Volker [3 ]
Dhara, Debabrata [4 ]
Jana, Anukul [4 ]
Scheschkewitz, David [1 ]
机构
[1] Saarland Univ, Krupp Chair Gen & Inorgan Chem, D-66123 Saarbrucken, Germany
[2] Saarland Univ, Inorgan Solid State Chem, D-66123 Saarbrucken, Germany
[3] Saarland Univ, Serv Ctr X ray Diffract, D-66123 Saarbrucken, Germany
[4] Tata Inst Fundamental Res, Ctr Interdisciplinary Sci, Hyderabad 500075, Andhra Prades, India
关键词
Chemical vapor deposition; germanium; Iron; Thin layers; Transition metal tetrelides;
D O I
10.1002/ejic.202300433
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Binary iron-germanium phases are promising materials in magnetoelectric, spintronic or data storage applications due to their unique magnetic properties. Previous protocols for preparation of FexGey thin films and nanostructures typically involve harsh conditions and are challenging in terms of phase composition and homogeneity. Herein, we report the first example of single source chemical vapor deposition (CVD) of FexGey films. The appreciable volatility of [Ge[Fe-2(CO)(8)](2)], [Cl2GeFe(CO)(4)](2) and (NHC)-N-Me2iPr2 center dot GeCl2 center dot Fe(CO)(4) allowed for their application as precursors under standard CVD conditions ((NHC)-N-Me2iPr2= 1,3-diisopropoyl-4,5-dimethylimidazol-2-ylidene). The thermal decomposition products of the precursors were characterized by TGA and powder XRD. Deposition experiments in a cold-wall CVD reactor resulted in dense films of Fe(x)G(e)y. During the optimization of synthetic conditions for precursor preparation the new iron-germanium cluster Cl2Ge[Fe-2(CO)(8)]Ge[Fe-2(CO)(8)] was obtained in experiments with a higher stoichiometric ratio of GeCl2 center dot 1,4-dioxane vs. Fe-2(CO)(9).
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页数:10
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