LOW THRESHOLD CURRENT GAAS ALGAAS GRIN-SCH LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI3N4 MASKED SUBSTRATES

被引：3
|
作者：
MEIER, HP
VANGIESON, E
WALTER, W
HARDER, C
BUCHMANN, P
WEBB, D
MOSER, A
机构：
来源：
ELECTRONICS LETTERS | 1988年 / 24卷 / 18期
关键词：
D O I：
10.1049/el:19880764
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1123 / 1125
页数：3
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