CHEMICAL ORDERING IN GE-GA-SE GLASSES

被引：39
|
作者：
GIRIDHAR, A
MAHADEVAN, S
机构：
[1] Materials Science Division, National Aeronautical Laboratory, Bangalore
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1990年 / 126卷 / 1-2期
关键词：
D O I：
10.1016/0022-3093(90)91034-O
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Variation of the density, glass transition temperature and electrical conductivity with composition are reported for GexGa15Se85-x and GeSe2Ga2Se3 glasses. Specific features observed in the variation of these properties with composition are found to be consistent with a chemically ordered network model for the atomic arrangement in these glasses. Results obtained are compared with those of glasses of the GeSbSe system. © 1990.
引用
收藏
页码：161 / 169
页数：9
相关论文
共 50 条
  • [1] COEXISTENCE OF TOPOLOGICAL AND CHEMICAL ORDERING EFFECTS IN GE-GA-SE GLASSES
    MAHADEVAN, S
    GIRIDHAR, A
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 152 (01) : 42 - 49
  • [2] Short range order in Ge-Ga-Se glasses
    Pethes, I.
    Chahal, R.
    Nazabal, V.
    Prestipino, C.
    Trapananti, A.
    Pantalei, C.
    Beuneu, B.
    Bureau, B.
    Jovari, P.
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 651 : 578 - 584
  • [3] Structural investigation of crystallized Ge-Ga-Se chalcogenide glasses
    Klym, H.
    Shpotyuk, O.
    Karbovnyk, I.
    Calvez, L.
    Popov, A. I.
    [J]. FUNCTIONAL MATERIALS AND NANOTECHNOLOGIES (FM&NT 2018), 2019, 503
  • [4] Thermal and optical analysis of Ge-Ga-Se chalcogenide glasses
    Sakai, T.
    Maeda, K.
    Munzar, M.
    Tonchev, D.
    Ikari, T.
    Kasap, S. O.
    [J]. PHYSICS AND CHEMISTRY OF GLASSES-EUROPEAN JOURNAL OF GLASS SCIENCE AND TECHNOLOGY PART B, 2006, 47 (02): : 225 - 228
  • [5] Photoluminescence in Er-doped Ge-Ga-Se glasses
    Koughia, K
    Munzar, M
    Tonchev, D
    Haugen, CJ
    Decorby, RG
    McMullin, JN
    Kasap, SO
    [J]. JOURNAL OF LUMINESCENCE, 2005, 112 (1-4) : 92 - 96
  • [6] Photoluminescence properties of Er-doped Ge-Ga-Se glasses
    Munzar, M.
    Koughia, K.
    Kasap, S. O.
    Haugen, C.
    DeCorby, R.
    McMullin, J. N.
    [J]. PHYSICS AND CHEMISTRY OF GLASSES-EUROPEAN JOURNAL OF GLASS SCIENCE AND TECHNOLOGY PART B, 2006, 47 (02): : 220 - 224
  • [7] Crystallization Processes in Ge-Ga-Se Glasses Studied with Positron Annihilation Technique
    Klym, H.
    Ingram, A.
    Shpotyuk, O.
    [J]. 2014 29TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS PROCEEDINGS - MIEL 2014, 2014, : 277 - 278
  • [8] Synthesis and properties of Pr3+-doped Ge-Ga-Se glasses
    Nemec, P
    Frumar, M
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 : 1018 - 1022
  • [9] Analysis of Crystallization Processes on the Surface of Ge-Ga-Se Glasses for Electronics and IR Photonics
    Klym, Halyna
    Kostiv, Yuriy
    Karbovnyk, Ivan
    Vasylchyshyn, Ivanna
    [J]. 2018 IEEE 38TH INTERNATIONAL CONFERENCE ON ELECTRONICS AND NANOTECHNOLOGY (ELNANO), 2018, : 152 - 155
  • [10] Optical band gap, infrared absorption and thermal diffusivity of Ge-Ga-Se glasses
    Thomas, S
    Philip, J
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1997, 200 (02): : 359 - 365
12345