GENERATION OF DIVACANCIES IN TIN-DOPED SILICON

被引：39
|
作者：
SVENSSON, BG
SVENSSON, J
LINDSTROM, JL
DAVIES, G
CORBETT, JW
机构：
[1] UNIV LONDON KINGS COLL,DEPT PHYS,LONDON WC2R 2LS,ENGLAND
[2] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222
[3] LINKOPING INST TECHNOL,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN
[4] NATL DEF RES INST,S-58111 LINKOPING,SWEDEN
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 26期
关键词：
D O I：
10.1063/1.98902
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2257 / 2259
页数：3
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