Dielectric Properties of Cd1-xZnxSe Thin Film Semiconductors

Cd1-xZnxSe (x=0, 0.5 and 1) thin films of thickness 300nm have been deposited on highly cleaned glass substrates (Soda-lime glass) by thermal evaporation technique under pressure 10(-5) Torr. The crystal structure, lattice parameters and grain size were determined from X-ray diffraction patterns of these films. The dielectric response and ac conductivity of the films are investigated in the frequency range from 80Hz to 5MHz and temperature range from 300K to 420K. AC conductivity increases linearly with the frequency according to the power relation sigma(ac)(omega) = A omega(s) The dielectric constant and loss show low values at high frequencies. The relaxation time tau, resistance R and capacitance C were calculated from Nyquist diagram. The behavior can be modeled by an equivalent parallel RC circuit.