TRANSIENT SPECTROSCOPY OF DEEP LEVELS IN THIN SEMICONDUCTOR-FILMS

被引：3
|
作者：
NG, K
CHAO, IW
HUNT, CE
CHURCHILL, JN
机构：
[1] Department of Electrical Engineering and Computer Science, University of California, Davis
来源：
JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 12期
关键词：
D O I：
10.1063/1.346861
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Characterization of deep levels in thin-film semiconductors by capactive pulse transient spectroscopy has been analyzed and verified by measurement. Numerical calculations show that highly resistive thin films create a degradation of signal and possible sign inversion of the signal. Experiments on silicon on insulator and molecular beam epitaxy GaAs Schottky barrier capacitors verify the calculated signal deviation.
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页码：6526 / 6528
页数：3
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