COMPARISON OF RANGE AND RANGE STRAGGLING OF IMPLANTED B-10 AND B-11 IN SILICON

被引:23
|
作者
RYSSEL, H
KRANZ, H
MULLER, K
HENKELMANN, RA
BIERSACK, J
机构
[1] INST FESTKORPERTECHNOL,D-8000 MUNCHEN 60,FED REP GER
[2] INST RADIOCHEM,D-8046 GARCHING,FED REP GER
[3] HAHN MEITNER INST,D-1000 BERLIN,FED REP GER
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D O I
10.1063/1.89419
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:399 / 401
页数:3
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