GROWTH OF BORON-NITRIDE THIN-FILMS BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：17

作者：

PHANI, AR ^{[1
]}

ROY, S ^{[1
]}

RAO, VJ ^{[1
]}

机构：

[1] INDIAN INST CHEM TECHNOL,DIV PHYS & INORGAN CHEM,MAT SCI GRP,HYDERABAD 500007,ANDHRA PRADESH,INDIA

来源：

THIN SOLID FILMS | 1995年 / 258卷 / 1-2期

关键词：

BORON NITRIDE; CHEMICAL VAPOR DEPOSITION; INFRARED SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY;

D O I：

10.1016/0040-6090(94)06335-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Boron nitride films were grown for the first time by metal-organic chemical vapour deposition from trimethyl borazine as a single-source organometallic precursor containing boron and nitrogen. Films were deposited at various substrate temperatures using ammonia as a carrier gas and were characterized by IR spectroscopy, X-ray diffraction and scanning electron microscopy; these reveal the presence of crystallites of boron nitride with an sp(2)- and sp(3)-bonded structure.

引用

页码：21 / 25

页数：5

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