THE EFFECT OF GATE MATERIAL ON OXIDE DEGRADATION DUE TO CHARGE-INJECTION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS

被引：10
|
作者：
AVNI, E
SONNENBLICK, Y
NISSANCOHEN, Y
机构：
来源：
SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 02期
关键词：
D O I：
10.1016/0038-1101(88)90136-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：245 / 250
页数：6
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