In-situ ellipsometry on sputtered dielectric and magneto-optic thin films

A four-gun magnetron sputtering chamber incorporating in-situ real-time spectroscopic ellipsometric analysis was used to grow magnetooptic memory structures. Data were taken at 44 wavelengths simultaneously from 410 nm to 750 nm, allowing the study of SiC/TbFeCo/SiC depositions on quartz in real time. These data were used to determine the sputter rates, optical constants, and the thicknesses of the films. The SiC data were taken at 1 min time intervals during growth, and the TbFeCo deposition was monitored continuously. Data were taken during the deposition of the entire structure without subjecting the sample to destructive analysis techniques or an oxidizing or reactive atmosphere.