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- [4] DECAY SCHEMES OF IN-116 (13 SEC) - A O+ LEVEL IN SN-116 PHYSICS LETTERS, 1962, 3 (01): : 36 - 39
- [6] INJECTION LEVEL LIMIT OF P-N JUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (05): : 611 - +
- [7] COUPLED DEFECT LEVEL RECOMBINATION IN THE P-N JUNCTION JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS, 2011, 62 (06): : 355 - 358
- [9] BETA-GAMMA-DECAY OF 5+-LEVEL IN IN-116 AND GAMMA-BRANCHING RATIOS IN SN-116 ZEITSCHRIFT FUR PHYSIK, 1970, 240 (03): : 244 - +
- [10] ISOMERIC CROSS-SECTION RATIOS IN CD-110(P,N)IN-110(M,G) AND CD-116(P,N)IN-116(M1M2) REACTIONS REVUE ROUMAINE DE PHYSIQUE, 1974, 19 (05): : 559 - 560