HETERO-EPITAXIAL GROWTH OF GE ON (111) SI BY VACUUM EVAPORATION

被引：19

作者：

GAROZZO, M

CONTE, G

EVANGELISTI, F

VITALI, G

机构：

[1] UNIV ROME, IST FIS G MARCONI, CNR, GRP NAZL STRUTTURA MAT, I-00100 ROME, ITALY

[2] UNIV ROME, FAC INGN, IST FIS, I-00100 ROME, ITALY

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 11期

关键词：

D O I：

10.1063/1.93404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1070 / 1072

页数：3

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