GENERATION AND ANNEALING OF INTERFACE TRAPS ON OXIDIZED SILICON IRRADIATED BY KEV ELECTRONS

被引：2

作者：

LIN, WWL ^{[1
]}

SAH, CT ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,ILLINOIS SOLID STATE ELECTR LAB,URBANA,IL 61801

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 09期

关键词：

D O I：

10.1016/0038-1101(88)90112-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1451 / 1459

页数：9

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