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LARGE-AREA BACK-ILLUMINATED INGAAS-INP PHOTO-DIODES FOR USE AT 1 TO 1.6 MU-M WAVELENGTH
被引:7
|
作者
:
BURRUS, CA
论文数:
0
引用数:
0
h-index:
0
BURRUS, CA
DENTAI, AG
论文数:
0
引用数:
0
h-index:
0
DENTAI, AG
LEE, TP
论文数:
0
引用数:
0
h-index:
0
LEE, TP
机构
:
来源
:
OPTICS COMMUNICATIONS
|
1981年
/ 38卷
/ 02期
关键词
:
D O I
:
10.1016/0030-4018(81)90213-3
中图分类号
:
O43 [光学];
学科分类号
:
070207 ;
0803 ;
摘要
:
引用
收藏
页码:124 / 126
页数:3
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共 22 条
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VERY-HIGH-SPEED BACK-ILLUMINATED INGAAS-INP PIN PUNCH-THROUGH PHOTO-DIODES
LEE, TP
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LEE, TP
BURRUS, CA
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OGAWA, K
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OGAWA, K
DENTAI, AG
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DENTAI, AG
ELECTRONICS LETTERS,
1981,
17
(12)
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432
[2]
BACK-ILLUMINATED INGAAS-INP P-I-N PHOTO-DIODES PREPARED BY MOLECULAR-BEAM EPITAXY
CHENG, KY
论文数:
0
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机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHENG, KY
CHO, AY
论文数:
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0
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机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHO, AY
LEE, TP
论文数:
0
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机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LEE, TP
BURRUS, CA
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BELL TEL LABS INC,MURRAY HILL,NJ 07974
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MANCHON, DD
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MANCHON, DD
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
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[3]
INGAAS-INP P-I-N PHOTO-DIODES FOR LIGHTWAVE COMMUNICATIONS AT THE 0.95-1.65 MU-M WAVELENGTH
LEE, TP
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LEE, TP
BURRUS, CA
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DENTAI, AG
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IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
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[4]
NEW INGAAS-INP AVALANCHE PHOTO-DIODE STRUCTURE FOR THE 1-1.6 MU-M WAVELENGTH REGION
SUSA, N
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SUSA, N
NAKAGOME, H
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NAKAGOME, H
MIKAMI, O
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MIKAMI, O
ANDO, H
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ANDO, H
KANBE, H
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KANBE, H
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1980,
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[5]
CHARACTERISTICS OF GERMANIUM AVALANCHE PHOTO-DIODES IN WAVELENGTH REGION OF 1-1.6 MU-M
ANDO, H
论文数:
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FUJITSU LABS LTD, KANAGAWA, JAPAN
FUJITSU LABS LTD, KANAGAWA, JAPAN
ANDO, H
KANBE, H
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FUJITSU LABS LTD, KANAGAWA, JAPAN
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KANBE, H
KIMURA, T
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FUJITSU LABS LTD, KANAGAWA, JAPAN
KIMURA, T
YAMAOKA, T
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FUJITSU LABS LTD, KANAGAWA, JAPAN
FUJITSU LABS LTD, KANAGAWA, JAPAN
YAMAOKA, T
KANEDA, T
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FUJITSU LABS LTD, KANAGAWA, JAPAN
FUJITSU LABS LTD, KANAGAWA, JAPAN
KANEDA, T
IEEE JOURNAL OF QUANTUM ELECTRONICS,
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[6]
ZN-DIFFUSED BACK-ILLUMINATED P-I-N PHOTO-DIODES IN INGAAS-INP GROWN BY MOLECULAR-BEAM EPITAXY
LEE, TP
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LEE, TP
BURRUS, CA
论文数:
0
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BURRUS, CA
CHO, AY
论文数:
0
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机构:
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CHO, AY
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论文数:
0
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机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHENG, KY
MANCHON, DD
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BELL TEL LABS INC,MURRAY HILL,NJ 07974
MANCHON, DD
APPLIED PHYSICS LETTERS,
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: 730
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[7]
INGAAS AVALANCHE PHOTO-DIODES FOR 1-MU-M WAVELENGTH REGION
SHIRAI, T
论文数:
0
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FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
SHIRAI, T
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FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
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MIKAWA, T
KANEDA, T
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FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
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FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
MIYAUCHI, A
ELECTRONICS LETTERS,
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[8]
LARGE-AREA AND VISIBLE RESPONSE VPE INGAAS PHOTO-DIODES
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RCA CORP LABS,PRINCETON,NJ 08540
RCA CORP LABS,PRINCETON,NJ 08540
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OLSEN, GH
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OLSEN, GH
IEEE TRANSACTIONS ON ELECTRON DEVICES,
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[9]
1.3 MU-M INP-INGAASP PLANAR AVALANCHE PHOTO-DIODES
SHIRAI, T
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SHIRAI, T
OSAKA, F
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OSAKA, F
YAMASAKI, S
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NAKAJIMA, K
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NAKAJIMA, K
KANEDA, T
论文数:
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KANEDA, T
ELECTRONICS LETTERS,
1981,
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: 826
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827
[10]
IN0.53GA0.47AS/INP PIN AND AVALANCHE PHOTO-DIODES FOR THE 1-MU-M TO 1.6-MU-M WAVELENGTH RANGE
TROMMER, R
论文数:
0
引用数:
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h-index:
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TROMMER, R
KUNKEL, W
论文数:
0
引用数:
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KUNKEL, W
SIEMENS FORSCHUNGS-UND ENTWICKLUNGSBERICHTE-SIEMENS RESEARCH AND DEVELOPMENT REPORTS,
1982,
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(04):
: 216
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