共 50 条
- [1] ELECTRICAL-PROPERTIES OF IRRADIATED GADOLINIUM-DOPED P-TYPE SI [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (09): : 1011 - 1014
- [5] OPTICAL AND ELECTRICAL-PROPERTIES OF HYDROGEN-PASSIVATED GALLIUM ANTIMONIDE [J]. PHYSICAL REVIEW B, 1995, 51 (04): : 2153 - 2158
- [6] Effects of Gadolinium Precursors on the Magnetic Properties of Gadolinium-doped Gallium Nitride for Spintronic Applications [J]. QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XVIII, 2022, 12009
- [7] ELECTRICAL-PROPERTIES OF GALLIUM MANGANESE ANTIMONIDE - A NEW DILUTED MAGNETIC SEMICONDUCTOR [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (08): : 4581 - 4582
- [9] Room Temperature Ferromagnetism in Gadolinium-doped Gallium Nitride [J]. MRS ADVANCES, 2018, 3 (03): : 159 - 164
- [10] Room Temperature Ferromagnetism in Gadolinium-doped Gallium Nitride [J]. MRS Advances, 2018, 3 (3) : 159 - 164