EPITAXIAL-GROWTH OF INP/INAS/INP QUANTUM-WELLS

被引：1
|
作者：
MIHAILOVIC, M
CADORET, M
BANVILLET, H
GIL, E
CADORET, R
机构：
[1] Laboratoire de Physique, Milieux Condensés Université Blaise Pascal-Clermont-Ferrand II, URA
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1990年 / 8卷 / 02期
关键词：
D O I：
10.1016/0749-6036(90)90086-M
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We are reporting a study of InP/InAs/InP quantum wells growth by Hydride Vapor Phase Epitaxy. Previous studies of InP and InGaAs depositions together with the automation of gas supply operations enable us to accurately plan the vapour phase composition above the substrate and the duration of each operation. Several thicknesses of InAs layers were achieved. A single monolayer width is assigned to the thinnest one as assessed by a Photo Luminescence peak energy of 1.23 eV (13 meV FHWM) which is the highest value ever reported for an InP/InAs/InP quantum well. © 1990.
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页码：175 / 177
页数：3
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