DEPENDENCE OF THE HOT-ELECTRON SURFACE THERMO-EMF ON THE SURFACE BAND BENDING OF N-TYPE SILICON

被引：0

作者：

MIKHALYAK, MM

VERSOTSKAS, AP

KALVENAS, SP

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 08期

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暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：883 / 886

页数：4

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