INVESTIGATION OF ELECTRODFPOSITED CdSe THIN-FILM BY SURFACE PHOTOVOLTAGE SPECTROSCOPY

CdSe semiconductor thin film electrodes have been prepared by means of electrodeposition. They are capable of achieving 5.9% solar energy conversion in PEC performance after being annealed at 450 degrees C in air. Surface (SPY) has been used to study their photoelectrochemical properties. spectra of the CdSe thin films with and without annealing show that surface of minority carriers is significantly reduced after annealing. The minority carriers diffusion length L-p has been determined by extrapolating plots of reciprocal surface photovoltage as a function of the absorption length zero Delta V-pb(-1). It is found that L-p = 0.42 mu m.