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- [1] PROPERTIES OF IONIZING-RADIATION COUNTERS MADE OF SILICON-CARBIDE DOPED BY DIFFUSION OF BERYLLIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (05): : 831 - +
- [2] BERYLLIUM AS A DONOR IMPURITY IN SILICON-CARBIDE FIZIKA TVERDOGO TELA, 1978, 20 (02): : 448 - 451
- [3] DIFFUSION OF BERYLLIUM IN SILICON CARBIDE SOVIET PHYSICS SOLID STATE,USSR, 1968, 10 (03): : 634 - +
- [5] DIFFUSION OF BORON IN SILICON-CARBIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (03): : 414 - &
- [6] CHARACTERISTICS OF THE DIFFUSION OF BORON IN SILICON-CARBIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (02): : 222 - 223