KINETICS OF NANOSECOND ELECTRICAL CONDITIONING OF SWITCHING DEVICES MADE OF NONCRYSTALLINE GEXTE1-X FILMS

被引：0
|
作者：
BABYANSKAS, E
BALCHYUNAS, V
BALYAVICHYUS, S
CHENIS, A
SHIKTOROV, N
YASUTIS, V
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1991年 / 25卷 / 05期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Single pulses of 3-10 ns duration were used in a study of the kinetics of switching in devices made of noncrystalline GexTe1-x films. The process of "conditioning" was accompanied by hf fluctuations of the current, which appeared because of consecutive switching on and off of some parts of the interelectrode material. The process of switching off was attributed to thermal destruction of the low-resistance state. A mathematical model accounting for the main relationships governing such fluctuations was developed.
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页码：498 / 500
页数：3
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