共 50 条
- [1] INVESTIGATION INTO SURVIVAL OF EPITAXIAL BIPOLAR-TRANSISTORS IN CURRENT MODE SECOND BREAKDOWN[J]. ELECTRONICS LETTERS, 1978, 14 (04) : 100 - 101DOW, MNUTTALL, KI
- [2] ESTIMATE OF MINIMUM COLLECTOR CURRENT FOR INDUCING CURRENT MODE 2ND BREAKDOWN IN REVERSE BIASED EPITAXIAL BIPOLAR-TRANSISTORS[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1989, 66 (03) : 371 - 377HASSAN, MMSDOMINGOS, H
- [3] DEVELOPMENT OF A 2ND BREAKDOWN MODEL FOR BIPOLAR-TRANSISTORS[J]. CONFERENCE RECORD OF THE 1989 IEEE INDUSTRY APPLICATIONS SOCIETY ANNUAL MEETING, PTS 1-2, 1989, : 1243 - 1247MENHART, SPORTNOY, WM
- [4] MULTIPLE EQUILIBRIUM POINTS AND THEIR SIGNIFICANCE IN THE 2ND BREAKDOWN OF BIPOLAR-TRANSISTORS[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1981, 16 (01) : 8 - 15LATIF, MBRYANT, PR
- [5] SOME ASPECTS OF ELECTRICALLY-INITIATED 2ND BREAKDOWN IN BIPOLAR-TRANSISTORS[J]. BULLETIN DE L ACADEMIE POLONAISE DES SCIENCES-SERIE DES SCIENCES TECHNIQUES, 1975, 23 (10): : 873 - 880PIORO, ZSWIT, A
- [6] BREAKDOWN VOLTAGE OF HIGH-VOLTAGE BIPOLAR-TRANSISTORS[J]. SOLID-STATE ELECTRONICS, 1991, 34 (10) : 1109 - 1111HASSAN, MMSCHOWDHURY, GRALAM, MZ
- [7] 2ND BREAKDOWN OF DOUBLE EPITAXIAL TRANSISTORS[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (02) : 125 - +KANNAM, PJERNICK, FGMARINO, J
- [8] AN INVESTIGATION OF THE DAMAGE PRODUCED IN EPITAXIAL TRANSISTORS BY 2ND BREAKDOWN MECHANISMS[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1981, 50 (05) : 339 - 351DOW, DMNUTTALL, KI
- [9] BOUNDARY-CONDITIONS BETWEEN CURRENT MODE AND THERMAL MODE 2ND BREAKDOWN IN EPITAXIAL PLANAR TRANSISTORS[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) : 672 - 678KOYANAGI, KHANE, KSUZUKI, T
- [10] POWER AND ENERGY LIMITATIONS OF BIPOLAR-TRANSISTORS IMPOSED BY THERMAL-MODE AND CURRENT-MODE 2ND-BREAKDOWN MECHANISMS[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1154 - 1162BENNETT, WPKUMBATOVIC, RA