TRAP GENERATION AT SI/SIO2 INTERFACE IN SUBMICROMETER METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BY 4.9 EV ULTRAVIOLET-IRRADIATION

被引：13
|
作者：
LING, CH
机构：
[1] Department of Electrical Engineering, National University of Singapore, Kent Ridge
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 01期
关键词：
D O I：
10.1063/1.357046
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Subfemtofarad changes are reported in the gate-to-drain capacitance of submicrometer metal-oxide-semiconductor transistors subjected to 4.9 eV (253.7 nm) ultraviolet irradiation. The observation is attributed to trap generation at S/SiO2 interface, proposed to be due to the breaking of Si-H bonds.
引用
收藏
页码：581 / 583
页数：3
相关论文
共 50 条
  • [1] Study of a single dangling bond at the SiO2/Si interface in deep submicron metal-oxide-semiconductor transistors
    Militaru, L
    Souifi, A
    APPLIED PHYSICS LETTERS, 2003, 83 (12) : 2456 - 2458
  • [2] Influence of organic contaminant on trap generation in thin SiO2 of metal-oxide-semiconductor capacitors
    Yoshino, Takenobu
    Yokoyama, Shin
    Fujii, Toshiaki
    2002, Japan Society of Applied Physics (41):
  • [3] Influence of organic contaminant on trap generation in thin SiO2 of metal-oxide-semiconductor capacitors
    Yoshino, T
    Yokoyama, S
    Fujii, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (7A): : 4750 - 4753
  • [4] On the Si-SiO2 interface trap time constant distribution in metal-oxide-semiconductor transistors -: art. no. 014502
    Manéglia, Y
    Rahmoune, F
    Bauza, D
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (01)
  • [5] Hydrogen and hot electron defect creation at the Si(100)/SiO2 interface of metal-oxide-semiconductor field effect transistors
    Tuttle, BR
    McMahon, W
    Hess, K
    SUPERLATTICES AND MICROSTRUCTURES, 2000, 27 (2-3) : 229 - 233
  • [6] CHARACTERIZATION AND OPTIMIZATION OF THE SIO2/SIC METAL-OXIDE-SEMICONDUCTOR INTERFACE
    SHENOY, JN
    CHINDALORE, GL
    MELLOCH, MR
    COOPER, JA
    PALMOUR, JW
    IRVINE, KG
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (04) : 303 - 309
  • [7] INTERFACE AND BULK TRAP GENERATION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
    BUCHANAN, DA
    DIMARIA, DJ
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (12) : 7439 - 7452
  • [8] Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal-oxide-semiconductor structures
    Khosru, QDM
    Nakajima, A
    Yoshimoto, T
    Yokoyama, S
    APPLIED PHYSICS LETTERS, 2002, 80 (21) : 3952 - 3954
  • [9] STRUCTURAL DAMAGE AT THE SI/SIO2 INTERFACE RESULTING FROM ELECTRON INJECTION IN METAL-OXIDE-SEMICONDUCTOR DEVICES
    MIKAWA, RE
    LENAHAN, PM
    APPLIED PHYSICS LETTERS, 1985, 46 (06) : 550 - 552
  • [10] REDUCTION OF INTERFACE-TRAP DENSITY IN METAL-OXIDE-SEMICONDUCTOR DEVICES BY IRRADIATION
    BALASINSKI, A
    MA, TP
    APPLIED PHYSICS LETTERS, 1993, 62 (24) : 3170 - 3171
12345