HOT-CARRIER EFFECTS IN POLYSILICON EMITTER VERTICAL PNP AND NPN TRANSISTORS

被引：0
|
作者：
SPARKS, DR
HANKINS, KT
LEVITAN, AJ
机构：
[1] Delco Electronics Corporation, Kokomo
来源：
MICROELECTRONICS AND RELIABILITY | 1993年 / 33卷 / 14期
关键词：
D O I：
10.1016/0026-2714(93)90002-G
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hot-carrier effects due to reverse bias junctions of high performance vertical PNP bipolar transistors have been observed. Polysilicon emitter/base PNP devices both with and without deep trench isolation are examined. Comparisons are also made between high speed NPN and PNP transistors. The impact of a variety of stress conditions, BVebo, BVeco, BVceo and BVcbo has been studied.
引用
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页码：2087 / 2092
页数：6
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