INVESTIGATION OF THE ABSORPTION IN N-TYPE CD0.2HG0.8TE

被引:0
|
作者
SAGINOV, LD
PONOMARENKO, VP
STAFEEV, VI
FEDIRKO, VA
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 05期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:608 / 609
页数:2
相关论文
共 50 条
  • [1] LIFETIME AND GENERATION RECOMBINATION NOISE IN N-TYPE CD0.2HG0.8TE
    ANDRUKHIV, MG
    BAZHENOV, NL
    IVANOVOMSKII, VI
    KURBANOV, KR
    OGORODNIKOV, VK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (06): : 717 - 718
  • [2] PHOTOPLASTIC EFFECTS IN CD0.2HG0.8TE
    BARBOT, JF
    RIVAUD, G
    BLANCHARD, C
    DESOYER, JC
    LESCOUL, D
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1990, 1 (01) : 18 - 19
  • [3] INFRARED-ABSORPTION SPECTRA OF CD0.2HG0.8TE CRYSTALS
    GURAUSKAS, E
    KAVALIAUSKAS, J
    KRIVAITE, G
    SILEIKA, A
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1983, 115 (01): : 195 - 202
  • [4] PHOTOPLASTIC EFFECTS IN CD0.2HG0.8TE
    BARBOT, JF
    RIVAUD, G
    BLANCHARD, C
    LESCOUL, D
    DESOYER, JC
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1990, 9 (02) : 145 - 146
  • [5] GALVANOMAGNETIC PROPERTIES OF N-TYPE HG0.8CD0.2TE
    DORNHAUS, R
    NIMTZ, G
    SCHLABITZ, W
    ZAPLINSKI, P
    SOLID STATE COMMUNICATIONS, 1974, 15 (03) : 495 - 498
  • [6] DIFFUSION OF PHOSPHORUS AND ANTIMONY IN CD0.2HG0.8TE
    GORSHKOV, AV
    ZAITOV, FA
    SHALYAPINA, GM
    SHANGIN, SB
    INORGANIC MATERIALS, 1984, 20 (08) : 1147 - 1149
  • [7] COMPONENT AND IMPURITY MIGRATION MECHANISMS IN CD0.2HG0.8TE
    GORSHKOV, AV
    ZAITOV, FA
    SHANGIN, SB
    SHALYAPINA, GM
    ASATUROVA, IS
    FIZIKA TVERDOGO TELA, 1984, 26 (11): : 3233 - 3239
  • [8] ION-BEAM MILLING OF CD0.2HG0.8TE
    LUNN, MA
    DOBSON, PS
    JOURNAL OF CRYSTAL GROWTH, 1985, 73 (02) : 379 - 384
  • [9] TRANSPORT-PROPERTIES OF N-TYPE HG0.8CD0.2TE
    BARVIK, I
    SZOCS, V
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1991, 166 (01): : K15 - K18
  • [10] Systematic features of the diffusion of impurities in Cd0.2Hg0.8Te
    Gorshkov, AV
    Bovina, LA
    Stafeev, VI
    SEMICONDUCTORS, 1996, 30 (07) : 629 - 634