SELECTIVE NUCLEATION OF SILICON CLUSTERS IN CVD

被引：3
|
作者：
SHI, FG
SEINFELD, JH
机构：
[1] Department of Chemical Engineering, California Institute of Technology, California 91125
来源：
JOURNAL OF MATERIALS RESEARCH | 1992年 / 7卷 / 07期
关键词：
D O I：
10.1557/JMR.1992.1809
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A nucleation model is developed that includes chemical etching of atoms as an additional loss process besides thermal dissociation that competes with the process of atom addition in forming a cluster. The model has the proper qualitative features to describe observations of the evolution of cluster formation on amorphous silicon substrates in the low pressure CVD of a mixture of SiH2Cl2/HCl/H2.
引用
收藏
页码：1809 / 1815
页数：7
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