MANY-BODY EFFECTS IN RESONANT TUNNELING THROUGH QUANTUM DOTS

被引:45
|
作者
JOHNSON, NF [1 ]
PAYNE, MC [1 ]
机构
[1] UNIV CAMBRIDGE, CAVENDISH LAB, CAMBRIDGE CB3 0HE, ENGLAND
关键词
D O I
10.1103/PhysRevB.45.3819
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We show that the resonance energies associated with tunneling through a typical semiconductor dot depend strongly on quantum-mechanical many-body effects in the dot. These resonance energies cannot be written as the sum of single-particle confinement energies and constant Coulomb charging energies, and the magnetic-field dependence of these resonance energies differs greatly from the single-electron result. The semiclassical description of Coulomb charging effects in terms of capacitances is shown to be incorrect.
引用
收藏
页码:3819 / 3821
页数:3
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