THEORY OF THE POLARIZATION DEPENDENCE OF 2-PHOTON ABSORPTION IN ZINCBLENDE SEMICONDUCTORS

被引:6
|
作者
HUTCHINGS, DC [1 ]
WHERRETT, BS [1 ]
机构
[1] HERIOT WATT UNIV, DEPT PHYS, EDINBURGH EH14 4AS, MIDLOTHIAN, SCOTLAND
关键词
D O I
10.1080/09500349414551081
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The polarization dependence of two-photon absorption is calculated for several zinc-blende semiconductors. The spectral dependence of the linear/circular dichroism is determined using an isotropic, four-band Kane bandstructure model and is shown to have specific features associated with the split-off band. The crystalline orientational dependence is determined using an anisotropic band-structure model obtained by additionally including the next highest upper conduction band set. It is shown that the anisotropic behaviour of the two-photon absorption is small in InSb but is quite substantial in GaAs giving a variation in the two-photon absorption coefficient for linearly polarized light of around 70% at a wavelength of 1 mum.
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页码:1141 / 1149
页数:9
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