SWITCHING SPEED AND POWER DISSIPATION OF PLANAR-TYPE GUNN DIODES

被引：7
|
作者：
NAKAMURA, M [1 ]
KURONO, H [1 ]
TOYABE, T [1 ]
HIRAO, M [1 ]
KODERA, H [1 ]
机构：
[1] HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO, JAPAN
来源：
SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 01期
关键词：
D O I：
10.1016/0038-1101(73)90127-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：75 / +
页数：1
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