OXYGEN PRECIPITATION IN SILICON BETWEEN 600-DEGREES-C AND 800-DEGREES-C

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作者：

TEMPELHOFF, K

GLEICHMANN, R

HAHN, B

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 06期

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O646 [电化学、电解、磁化学];

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081704 ;

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页码：C237 / C237

页数：1

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