PREPARATION OF COLLOIDAL SEMICONDUCTOR SOLUTIONS OF MOS2 AND WSE2 VIA SONICATION

被引:31
|
作者
GUTIERREZ, M
HENGLEIN, A
机构
关键词
D O I
10.1016/0041-624X(89)90066-8
中图分类号
O42 [声学];
学科分类号
070206 ; 082403 ;
摘要
引用
收藏
页码:259 / 261
页数:3
相关论文
共 50 条
  • [1] Vertical heterojunction of MoS2 and WSe2
    Xiao, Shudong
    Li, Mingda
    Seabaugh, Alan
    Jena, Debjeep
    Xing, Huili Grace
    [J]. 2014 72ND ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2014, : 169 - +
  • [2] Mechanical reliability of monolayer MoS2 and WSe2
    Cui, Teng
    Mukherjee, Sankha
    Onodera, Momoko
    Wang, Guorui
    Kumral, Boran
    Islam, Akibul
    Shayegannia, Moein
    Krishnan, Gopi
    Barri, Nima
    Serles, Peter
    Zhang, Xiang
    Sassi, Lucas M.
    Tam, Jason
    Bassim, Nabil
    Kherani, Nazir P.
    Ajayan, Pulickel M.
    Machida, Tomoki
    Singh, Chandra Veer
    Sun, Yu
    Filleter, Tobin
    [J]. MATTER, 2022, 5 (09) : 2975 - 2989
  • [3] Ultrafast dynamics of bright and dark excitons in monolayer WSe2 and heterobilayer WSe2/MoS2
    Bange, Jan Philipp
    Werner, Paul
    Schmitt, David
    Bennecke, Wiebke
    Meneghini, Giuseppe
    AlMutairi, AbdulAziz
    Merboldt, Marco
    Watanabe, Kenji
    Taniguchi, Takashi
    Steil, Sabine
    Steil, Daniel
    Weitz, R. Thomas
    Hofmann, Stephan
    Jansen, G. S. Matthijs
    Brem, Samuel
    Malic, Ermin
    Reutzel, Marcel
    Mathias, Stefan
    [J]. 2D MATERIALS, 2023, 10 (03)
  • [4] Efficient modulation of MoS2/WSe2 interlayer excitons via uniaxial strain
    Ren, Liwang
    Li, Zhiwei
    Lv, Yawei
    Li, Xin
    Zhang, Danliang
    Li, Wanying
    Liu, Liting
    Kong, Lingan
    Duan, Xidong
    Wang, Xiao
    Pan, Anlian
    Liao, Lei
    Liu, Yuan
    [J]. APPLIED PHYSICS LETTERS, 2022, 120 (05)
  • [5] Highly Nonlinear Memory Selectors with Ultrathin MoS2/WSe2/MoS2 Heterojunction
    Chen, Hongye
    Wan, Tianqing
    Zhou, Yue
    Yan, Jianmin
    Chen, Changsheng
    Xu, Zhihang
    Zhang, Songge
    Zhu, Ye
    Yu, Hongyu
    Chai, Yang
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2024, 34 (15)
  • [6] Piezoelectricity in WSe2/MoS2 heterostructure atomic layers
    Yu, Sheng
    Rice, Quinton
    Tabibi, Bagher
    Li, Qiliang
    Seo, Felix Jaetae
    [J]. NANOSCALE, 2018, 10 (26) : 12472 - 12479
  • [7] Atomic layer deposition of ZnO on MoS2 and WSe2
    Walter, Timothy N.
    Lee, Sora
    Zhang, Xiaotian
    Chubarov, Mikhail
    Redwing, Joan M.
    Jackson, Thomas N.
    Mohney, Suzanne E.
    [J]. APPLIED SURFACE SCIENCE, 2019, 480 : 43 - 51
  • [8] Enhanced Luminescence of MoS2, WS2 and WSe2, Direct Band Gap Semiconductor Heterostructures
    So, Jin-Kyu
    Zheng, Shoujun
    Liu, Fucai
    Liu, Zheng
    Zheludev, Nikolay
    Fan, Hong Jin
    [J]. 2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2018,
  • [9] Zitterbewegung of Moire Excitons in Twisted MoS2/WSe2 Heterobilayers
    Lavor, I. R.
    da Costa, D. R.
    Covaci, L.
    Milosevic, M. V.
    Peeters, F. M.
    Chaves, A.
    [J]. PHYSICAL REVIEW LETTERS, 2021, 127 (10)
  • [10] Observation of ultralong valley lifetime in WSe2/MoS2 heterostructures
    Kim, Jonghwan
    Jin, Chenhao
    Chen, Bin
    Cai, Hui
    Zhao, Tao
    Lee, Puiyee
    Kahn, Salman
    Watanabe, Kenji
    Taniguchi, Takashi
    Tongay, Sefaattin
    Crommie, Michael F.
    Wang, Feng
    [J]. SCIENCE ADVANCES, 2017, 3 (07):