AMORPHOUS SILICON-CARBON BASED P-I-N STRUCTURES FOR ELECTRON FLUX CONVERSION

被引：0
|
作者：
FEOKTISTOV, NA
FLORINSKII, VY
MOROZOVA, LE
PEVTSOV, AB
机构：
[1] A. F. Loffe Physico-Technical Institute, Academy of Sciences, Politekhnicheskaya, 194021, St. Petersburg
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1995年 / 78卷 / 03期
关键词：
D O I：
10.1080/00207219508926185
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A study of the collection efficiency of electron-hole pairs in amorphous silicon-carbon based p-i-n structures under keV electron irradiation is presented. a-Si:C:H films have been prepared by a conventional RF plasma deposition technique. A scanning electron microscope in the spot-mode regime was used for electron irradiation of our structures. The current-voltage characteristics and spectral dependence of the short-circuit current were measured. A numerical current transport model was used for simulation and the energy of the electron-hole pair creation E(eh) = 7-8 eV was determined.
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收藏
页码：533 / 538
页数：6
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