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SOL-GEL SILICATE THIN-FILM ELECTRONIC-PROPERTIES

被引：23
|
作者：
WARREN, WL
LENAHAN, PM
BRINKER, CJ
ASHLEY, CS
REED, ST
SHAFFER, GR
机构：
[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
[2] PENN STATE UNIV,UNIVERSITY PK,PA 16802
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 08期
关键词：
D O I：
10.1063/1.348366
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have explored the effects of various processing parameters on the dielectric and electronic integrity of sol-gel-derived silicate thin films and have identified several factors that strongly affect the thin-film electronic properties. We find that sol-gel dielectrics can exhibit excellent dielectric integrity: viz., low interface trap densities and fairly good insulating properties approaching those of a thermally grown silicon dioxide film on silicon.
引用
收藏
页码：4404 / 4408
页数：5
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