INITIAL GROWTH-MECHANISM FOR GAAS AND GAP ON SI SUBSTRATE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：3
|
作者：
SOGA, T
GEORGE, T
JIMBO, T
UMENO, M
机构：
[1] Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya
[2] Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12A期
关键词：
INITIAL GROWTH; GROWTH MECHANISM; DISLOCATION; GAAS-ON-SI; GAP-ON-SI; GROWTH MODE; TEM; MOCVD;
D O I：
10.1143/JJAP.30.3471
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The initial stage of epitaxial growth of GaAs and GaP on Si substrates by atmospheric-pressure metalorganic chemical vapor deposition was investigated. GaP tends to grow three-dimensionally and the GaP island is faceted by a (111)-type plane. The island density of GaP increases with increasing V/III ratio and the growth mode changes from three-dimensional to two-dimensional. On the other hand, the island density does not depend on the V/III ratio in the case of GaAs on Si. The island formation mechanisms based on the experimental results are described.
引用
收藏
页码：3471 / 3474
页数：4
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