OXYGEN IMPURITY IN SILICON SINGLE CRYSTALS

被引：16

作者：

SMAKULA, A

KALNAJS, J

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1958年 / 6卷 / 01期

关键词：

D O I：

10.1016/0022-3697(58)90216-6

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：46 / 50

页数：5

共 50 条

[1] Distribution improvement for main impurity, oxygen and carbon concentration in Czochralski silicon single crystals
Vanca, V
Schlett, Z
Dinu, M
Enache, V
[J]. CAS '96 PROCEEDINGS - 1996 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 19TH EDITION, VOLS 1 AND 2, 1996, : 417 - 420
[2] Formation of Cobalt Impurity Microinclusions in Silicon Single Crystals
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[J]. INORGANIC MATERIALS, 2018, 54 (12) : 1183 - 1186
[3] REMANENT IMPURITY PHOTOCONDUCTIVITY SPECTRA OF SILICON SINGLE CRYSTALS
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TKACHEV, VD
VAVILOV, VS
[J]. SOVIET PHYSICS-SOLID STATE, 1963, 4 (12): : 2616 - 2617
[4] Formation of Cobalt Impurity Microinclusions in Silicon Single Crystals
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[J]. Inorganic Materials, 2018, 54 : 1183 - 1186
[5] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS
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[J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) : 882 - 887
[6] PHOTOELECTRONIC PROPERTIES OF ZN IMPURITY IN SILICON SINGLE-CRYSTALS
SKLENSKY, A
BUBE, RH
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (01): : 27 - &
[7] OXYGEN IMPURITY IN SILICON
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[J]. SOLID STATE TECHNOLOGY, 1982, 25 (04) : 207 - 207
[8] OXYGEN IMPURITY MODE IN THE SUBMILLIMETER SPECTRA OF SI SINGLE-CRYSTALS
VOLKOV, AA
GONCHAROV, YG
KALINUSHKIN, VP
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PROKHOROV, AM
[J]. FIZIKA TVERDOGO TELA, 1989, 31 (07): : 262 - 264
[9] INFLUENCE OF IMPURITY ANIONS CONTAINING OXYGEN ON DENSITY OF NACL AND KCL SINGLE CRYSTALS
ANDREEV, GA
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (01): : 140 - +
[10] DEMONSTRATION OF OXYGEN IN SILICON SINGLE-CRYSTALS USING ESR
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 17 (02): : 459 - 470

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