SUBBANDS IN THE GAP IN INVERTED-BAND SEMICONDUCTOR QUANTUM-WELLS

被引：47
|
作者：
KORENMAN, V
DREW, HD
机构：
来源：
PHYSICAL REVIEW B | 1987年 / 35卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.35.6446
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：6446 / 6449
页数：4
相关论文
共 50 条
  • [1] BAND-GAP RENORMALIZATION IN SEMICONDUCTOR QUANTUM-WELLS
    RYAN, JC
    REINECKE, TL
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1993, 13 (02) : 177 - 180
  • [2] BAND-GAP RENORMALIZATION IN SEMICONDUCTOR QUANTUM-WELLS
    DASSARMA, S
    JALABERT, R
    YANG, SRE
    [J]. PHYSICAL REVIEW B, 1990, 41 (12): : 8288 - 8294
  • [3] BAND-GAP RENORMALIZATION OF OPTICALLY-EXCITED SEMICONDUCTOR QUANTUM-WELLS
    RYAN, JC
    REINECKE, TL
    [J]. PHYSICAL REVIEW B, 1993, 47 (15): : 9615 - 9620
  • [4] BAND NONPARABOLICITY EFFECTS IN SEMICONDUCTOR QUANTUM-WELLS
    NELSON, DF
    MILLER, RC
    KLEINMAN, DA
    [J]. PHYSICAL REVIEW B, 1987, 35 (14): : 7770 - 7773
  • [5] EFFECTIVE BAND HAMILTONIAN IN SEMICONDUCTOR QUANTUM-WELLS
    ELCI, A
    [J]. PHYSICAL REVIEW B, 1994, 49 (11) : 7432 - 7442
  • [6] QUALITATIVE ESTIMATION OF OPTICAL GAIN IN WIDE-BAND-GAP SEMICONDUCTOR QUANTUM-WELLS
    AHN, D
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) : 8206 - 8208
  • [7] TUNNELING OF ELECTRONS IN QUANTUM-WELLS WITH INDIRECT GAP SEMICONDUCTOR BARRIERS
    BREY, L
    TEJEDOR, C
    [J]. SOLID STATE COMMUNICATIONS, 1987, 61 (09) : 573 - 576
  • [8] Edge states in lateral p-n junctions in inverted-band HgTe quantum wells
    Piatrusha, S. U.
    Khrapai, V. S.
    Kvon, Z. D.
    Mikhailov, N. N.
    Dvoretsky, S. A.
    Tikhonov, E. S.
    [J]. PHYSICAL REVIEW B, 2017, 96 (24)
  • [9] Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer
    Karalic, Matija
    Strkalj, Antonio
    Masseroni, Michele
    Chen, Wei
    Mittag, Christopher
    Tschirky, Thomas
    Wegscheider, Werner
    Ihn, Thomas
    Ensslin, Klaus
    Zilberberg, Oded
    [J]. PHYSICAL REVIEW X, 2020, 10 (03)
  • [10] INTERFACE SUBBANDS OF HGTE-CDTE QUANTUM-WELLS
    LINLIU, YR
    SHAM, LJ
    [J]. SURFACE SCIENCE, 1986, 170 (1-2) : 438 - 439
12345