EPITAXIAL-GROWTH OF BATIO3 THIN-FILMS BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引：133

作者：

WILLS, LA ^{[1
]}

WESSELS, BW ^{[1
]}

RICHESON, DS ^{[1
]}

MARKS, TJ ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,DEPT CHEM,EVANSTON,IL 60208

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 01期

关键词：

D O I：

10.1063/1.107359

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial BaTiO3 thin films were grown in situ on (100) LaAlO3 by low-pressure organometallic chemical vapor deposition using the precursors Ba (hexafluoroacetylacetonate)2 (tetraglyme) and titanium tetraisopropoxide. The phase composition and epitaxial quality were sensitive to the reactant partial pressures and growth temperature. Deposition at 800-degrees-C yielded [100]-oriented BaTiO3 films. In-plane epitaxy was confirmed for the BaTiO3 films by x-ray diffraction.

引用

页码：41 / 43

页数：3

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