THIN-FILM LAYERED STRUCTURE FOR ACOUSTOOPTIC DEVICES

被引：12
|
作者：
JAIN, S [1 ]
MANSINGH, A [1 ]
机构：
[1] UNIV DELHI, DEPT PHYS & ASTROPHYS, DELHI 110007, INDIA
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1992年 / 25卷 / 07期
关键词：
D O I：
10.1088/0022-3727/25/7/014
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thin film layered structures for surface acoustic wave (SAW) and acousto-optic devices, which utilize the piezoelectric property of one layer and the photoelastic property of the other layer are reported. Three different structures, Si-ZnO-TeO2, Si-SiO2-TeO2-ZnO and Si-SiO2-ZnO, having interdigital transducers (IDTS) on the top layer have been studied, and it is shown that the Si-SiO2-TeO2-ZnO structure provides the highest acousto-optic figure of merit and electromechanical coupling for a SAW.
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收藏
页码：1116 / 1121
页数：6
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