METASTABLE DEFECT STRUCTURES IN ELEMENTAL AND COMPOUND SEMICONDUCTORS

被引：16

|

作者：

BENTON, JL

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 02期

关键词：

D O I：

10.1007/BF02657408

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：199 / 206

页数：8

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