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- [1] SIMPLE ANALYTICAL EXPLANATION OF TRANSIENT SWITCHING PROCESS IN AMORPHOUS-SEMICONDUCTOR, AS30TE48GE10SI12JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) : 1095 - 1105MIYAZONO, TIIDA, M
- [2] SIMPLE ANALYTICAL EXPLANATION OF TRANSIENT SWITCHING PROCESS IN AMORPHOUS SEMICONDUCTOR, As30Te48Ge10Si12.1600, (20):Miyazono, ToruIida, Masamori
- [3] TRANSIENT CONDUCTION CHARACTERISTICS OF AMORPHOUS THIN-FILMS OF SI12TE48AS30GE10 IN PRE-SWITCHING REGIMEJOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (05) : 737 - 752REEHAL, HSTHOMAS, CB
- [5] EFFECTS OF ELECTRODE MATERIALS ON SWITCHING BEHAVIOR OF AMORPHOUS-SEMICONDUCTOR SI12-GE10-AS30-TE48JOURNAL OF NON-CRYSTALLINE SOLIDS, 1974, 16 (02) : 247 - 257PETRILLO, GAKAO, KC
- [6] SOME FEATURES RELEVANT TO SWITCHING PROCESSES IN AMORPHOUS-SEMICONDUCTOR SI12GE10AS30TE48JOURNAL OF NON-CRYSTALLINE SOLIDS, 1975, 18 (02) : 275 - 283SAJI, MKAO, KC
- [7] A STUDY OF HIGH-FIELD TRANSIENT CONDUCTION IN AMORPHOUS FILMS OF SI12 TE48 AS30 GE10JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (06) : 927 - 935REEHAL, HSTHOMAS, CB
- [8] RESONANCE-ABSORPTION IN AMORPHOUS-SEMICONDUCTOR SI12-GE10-AS30-TE48JOURNAL OF NON-CRYSTALLINE SOLIDS, 1975, 18 (02) : 209 - 215BARAKAT, MAKAO, KCBRIDGES, E
- [9] CURRENT-VOLTAGE CHARACTERISTICS OF AMORPHOUS-CHALCOGENIDE FILMS PREPARED FROM SI12TE48AS30GE10PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (04): : 321 - 332REEHAL, HSTHOMAS, CB
- [10] Optical properties of As34Te44Ge10Si12 amorphous filmsPHYSICA B-CONDENSED MATTER, 2012, 407 (01) : 33 - 37Hegab, N. A.El-Mallah, H. M.