BORON IMPLANT ISOLATION FOR HIGH-TEMPERATURE GAAS INTEGRATED-CIRCUITS

被引：4

作者：

SINGH, BR ^{[1
]}

FRICKE, K ^{[1
]}

WURFL, J ^{[1
]}

HARTNAGEL, HL ^{[1
]}

机构：

[1] CENT ELECT ENGN RES INST,PILANI 333031,INDIA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 05期

关键词：

D O I：

10.1149/1.2069432

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper reports on the temperature stability of B+ implant isolation in GaAs MESFET type structures, passivated with PECVD Si3N4 and using high temperature ohmic contacts. Measurements of the isolation resistance at ambient temperatures up to 400-degrees-C are presented. The stability of the isolation implant is demonstrated by 1 h annealing at temperatures up to 700-degrees-C.

引用

页码：1470 / 1472

页数：3

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