LIFETIME AND RADIATIVE EFFICIENCY VS DENSITY IN THE STRAIN-CONFINED ELECTRON-HOLE LIQUID IN GE

被引：5
|
作者：
KELSO, SM [1 ]
FURNEAUX, JE [1 ]
机构：
[1] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
来源：
SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 11-1期
关键词：
D O I：
10.1016/0038-1101(78)90212-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1377 / 1380
页数：4
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