RECOMBINATION PROPERTIES OF OXYGEN-DOPED SILICON

被引：0
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作者：
GLINCHUK, KD
ILCHISHIN, VA
LITOVCHENKO, NM
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 10期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1124 / 1126
页数：3
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