METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF (INXGA1-XN/GAN)(N) LAYERED STRUCTURES AND REDUCTION OF INDIUM DROPLETS

(InxGa1-xN/GaN)(n) layered structures are grown to prevent generation of large indium droplets, making it possible to obtain smooth layers and uniform indium distributions. The indium mole fraction of (InxGa1-xN/GaN)(n) (x similar to 0.29) is much higher than that of an InxGa1-xN (x similar to 0.12) single layer grown under the same conditions. It is found that indium droplets generated during the growth of InxGa1-xN act as the indium sources for InxGa1-xN alloys during the growth of GaN. Indium droplets are reduced by using the (InxGa1-xN/GaN)(n), so that InxGa1-xN with a high indium mole fraction can be easily obtained.