THE EFFECT OF PROCESS PARAMETERS ON DC SELF-BIAS VOLTAGE IN REACTIVE ION ETCHING OF GAAS USING CH4/H-2

被引：1
|
作者：
SAHAFI, HF
WEBB, AP
CARTER, MA
GOLDSPINK, GF
机构：
[1] GEC MARCONI,MAT TECHNOL GRP,TOWCESTER NN12 8EQ,NORTHANTS,ENGLAND
[2] ACHESON COLLOIDS CO,PLYMOUTH PL4 0SP,DEVON,ENGLAND
来源：
MICROELECTRONICS JOURNAL | 1994年 / 25卷 / 01期
关键词：
D O I：
10.1016/0026-2692(94)90159-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Reactive ion etching of GaAs was carried out in mixtures of methane and hydrogen to study the behaviour of the de self-bias voltage. The etch rate was evaluated for different values of the process parameters including changes in the volume concentration of methane in hydrogen, while monitoring the dc self-bias voltage. An explanation for the variation of this voltage is suggested.
引用
收藏
页码：63 / 68
页数：6
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