CHARACTERISTICS OF MOSFETS FABRICATED IN LASER-RECRYSTALLIZED POLYSILICON ISLANDS WITH A RETAINING WALL STRUCTURE ON AN INSULATING SUBSTRATE

被引：50
|
作者：
LAM, HW
TASCH, AF
HOLLOWAY, TC
机构：
来源：
ELECTRON DEVICE LETTERS | 1980年 / 1卷 / 10期
关键词：
D O I：
10.1109/EDL.1980.25290
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：206 / 208
页数：3
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    NAKATA, H
    MATSUMOTO, T
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    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C100 - C100
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    [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 214 - 216
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    GIBBONS, JF
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    AKASAKA, Y
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    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) : C500 - C500
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