FORMATION OF THE OXYGEN PRECIPITATE-FREE ZONE IN SILICON

被引：13
|
作者：
YANG, K
CARLE, J
KLEINHENZ, R
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 12期
关键词：
D O I：
10.1063/1.338996
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：4890 / 4896
页数：7
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