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SPIN ORIENTATION BY OPTICAL-PUMPING IN GAAS GROWN ON INP - COMPARISON WITH GAAS/SI

被引：1
|
作者：
BACQUET, G [1 ]
LAURET, N [1 ]
BENMARZOUK, M [1 ]
PEARTON, SJ [1 ]
HOBSON, WS [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
SOLID STATE COMMUNICATIONS | 1991年 / 80卷 / 09期
关键词：
D O I：
10.1016/0038-1098(91)90884-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effects of hydrogenation on the 1.7 K optical pumping properties of GaAs grown on InP substrate by metalorganic chemical vapor deposition are investigated in the (1.616-2.032 eV) excitation energy range. The optical pumping effects observed on the two transitions involving electrons and M(J) = +/- 1/2 or M(J) = +/- 3/2 holes suggest incomplete hole spin depolarization. These results are compared with those obtained on intentionally undoped GaAs/Si samples.
引用
收藏
页码：669 / 672
页数：4
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