NUMERICAL STUDY OF THE EFFECT OF COULOMB REPULSION ON RESONANT-TUNNELING

被引：17

作者：

NONOYAMA, S ^{[1
]}

OGURI, A ^{[1
]}

ASANO, Y ^{[1
]}

MAEKAWA, S ^{[1
]}

机构：

[1] NAGOYA UNIV,DEPT APPL PHYS,CHIKUSA KU,NAGOYA 46401,JAPAN

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.50.2667

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of on-site Coulomb repulsion on the process of resonant tunneling is studied in the tight-binding model of a quasi-one-dimensional system. The conductance through a small region where the Coulomb interaction is strong is calculated as a function of chemical potential with use of the Kubo formula. The Green's function and the number of electrons in the region are obtained self-consistently using the recursion method in the mean-field approximation. It is found that the conductance shows various doublet structures depending on the broadening of the virtual bound state and the Coulomb interaction.

引用

页码：2667 / 2670

页数：4

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