3RD-ORDER NONLINEARITY OF SEMICONDUCTOR-DOPED GLASSES AT FREQUENCIES BELOW BAND-GAP

被引：50
|
作者：
BANFI, GP
DEGIORGIO, V
FORTUSINI, D
TAN, HM
机构：
[1] Universita di Pavia, Pavia
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 01期
关键词：
D O I：
10.1063/1.115473
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is indicated in the measurements that the real part of the third-order susceptibility of semi-conductor-doped glasses (SDG) below band gap is positive. It takes valves not too different from those of the glass matrix itself for the usual fraction volume of the crystallites. The results show that, below band gap, similarly to Imχm(3) and to the refractive index change per excited carrier Reχm(3) were also not much affected when the size of the semiconductor shrinks to a few nm.
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页码：13 / 15
页数：3
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