REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF SB INCORPORATION DURING MOLECULAR-BEAM EPITAXY GROWTH OF GASB AND ALSB

被引：22

作者：

WATERMAN, JR

SHANABROOK, BV

WAGNER, RJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 02期

关键词：

D O I：

10.1116/1.586146

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The incorporation of antimony into GaSb and AlSb during molecular-beam epitaxy growth has been investigated using reflection high-energy electron diffraction (RHEED). RHEED intensity oscillations limited by the incorporation rate of Sb were observed. The RHEED oscillation measurements together with beam equivalent pressure measurements demonstrate that four Sb atoms are incorporated for each Sb4 molecule incident on the surfaces of GaSb and AlSb for substrate temperatures ranging from 350 to 530-degrees-C and 420 to 610-degrees-C, respectively. A new Ga stabilized (4 x 3) surface reconstruction was observed for (100) GaSb.

引用

页码：895 / 897

页数：3

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